1 US0008 n-ch 100v fast switching mosfets symbol parameter rating units v ds drain-source voltage 100 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ 10v 1 1.2 a i d @t a =70 continuous drain current, v gs @ 10v 1 1 a i dm pulsed drain current 2 5 a p d @t a =25 total power dissipation 3 1 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 125 /w r jc thermal resistance junction-case 1 --- 80 /w id 100v 310m ? 1.2a the US0008 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the small power switching and load switch applications. the US0008 meet the rohs and green product requirement with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z green device available general description features applications z high frequency point-of-load synchronous small power switching for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sot23 pin configuration product summery bv dss r ds(on)
2 n-ch 100v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 100 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.067 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =1a --- 260 310 m v gs =4.5v , i d =0.5a --- 270 320 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient --- -4.2 --- mv/ i dss drain-source leakage current v ds =80v , v gs =0v , t j =25 --- --- 1 ua i dss drain-source leakage current v ds =80v , v gs =0v , t j =25 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =1a --- 2.4 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.8 5.6 q g total gate charge (10v) v ds =80v , v gs =10v , i d =1a --- 9.7 13.6 nc q gs gate-source charge --- 1.6 2.2 q gd gate-drain charge --- 1.7 2.4 t d(on) turn-on delay time v dd =50v , v gs =10v , r g =3.3 i d =1a --- 1.6 3.2 ns t r rise time --- 19 34 t d(off) turn-off delay time --- 13.6 27 t f fall time --- 19 38 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 508 711 pf c oss output capacitance --- 29 41 c rss reverse transfer capacitance --- 16.4 23 symbol parameter conditions min. typ. max. unit i s continuous source current 1,4 v g =v d =0v , force current --- --- 1.2 a i sm pulsed source current 2,4 --- --- 5 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =1a , di/dt=100a/s , t j =25 --- 14 --- ns q rr reverse recovery charge --- 9.3 --- nc \ note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics US0008
3 n-ch 100v fast switching mosfets 0.0 1.0 2.0 3.0 4.0 5.0 0 0.5 1 1.5 2 2.5 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 245 250 255 260 265 246810 v gs (v) r dson (m ? ) i d =1a 0 0.4 0.8 1.2 1.6 2 00.30.60.9 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j US0008
4 n-ch 100v fast switching mosfets 10 100 1000 1 5 9 13172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.00 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 v ds (v) i d (a) t a =25 single pulse 1s 10ms 100ms dc 100us 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) p dm d = t on /t t jpeak = t a + p dm x r ja t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 gate charge waveform US0008
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